| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8037267 | Thin Solid Films | 2013 | 6 Pages |
Abstract
⺠Diamond nucleation density of 1011/cm2 was achieved on Ti6Al4V at ~ 350 °C. ⺠Optimized nanodiamond seeding and a two-step deposition process were used. ⺠Nanocrystalline diamond thin films were deposited at low temperature. ⺠Significantly reduced deterioration of Ti6Al4V substrate was achieved.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
C.Z. Zhang, Y.S. Li, Y. Tang, L. Yang, L. Zhang, Y. Sun, Q. Yang, A. Hirose,