| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8037277 | Thin Solid Films | 2013 | 4 Pages |
Abstract
⺠We studied a method of growing graphene on SiC at low temperature. ⺠Fluorocarbon plasma pre-etching becomes a key factor in this method. ⺠Our graphene shows good quality.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Yijun Xu, Xuemei Wu, Chao Ye, Yanhong Deng, Tian Chen, Shuibing Ge,