| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8037308 | Thin Solid Films | 2013 | 5 Pages |
Abstract
⺠A Si-Zr-C-N single source molecular precursor is proposed. ⺠Plasma enhanced chemical vapor deposition was used to prepare a thin membrane. ⺠Smooth and uniform layer was obtained on a γ-alumina porous support. ⺠Membranes presented a good stability up to 350 °C. ⺠Si-Zr-C-N membranes showed good performances in gas separation.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
L. Chareyre, S. Cerneaux, D. Cornu, V. Rouessac,