| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8037521 | Thin Solid Films | 2013 | 4 Pages |
Abstract
⺠Deposition study of GeSx for resistive random-access memories (ReRAM) ⺠40 to 500 nm thin films of GeSx were grown by radio-frequency sputtering. ⺠Stable deposition in the power range of 5 to 50 W and pressure range of 0.5 to 20 Pa ⺠The film's stoichiometry (1.6 < x < 2.2) can be adjusted by controlling the pressure. ⺠ReRAM cells with GeSx demonstrate an off/on ratio of up to 9 orders of magnitude.
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Jan van den Hurk, Ilia Valov, Rainer Waser,