Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8038266 | Ultramicroscopy | 2014 | 5 Pages |
Abstract
Spherical aberration correction in high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) allows us to form an electron probe with reduced depth of field. Using through-focal HAADF imaging, we experimentally demonstrated 3D strain measurement in a strained-channel transistor. The strain field distribution in the channel region was obtained by scanning an electron beam over a plan-view specimen. Furthermore, the decrease in the strain fields toward the silicon substrate was revealed at different focal planes with a 5-nm focal step. These results demonstrate that it is possible to reconstruct the 3D strain field in electronic devices.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Suhyun Kim, Younheum Jung, Sungho Lee, Joong Jung Kim, Gwangseon Byun, Sunyoung Lee, Haebum Lee,