| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 80384 | Solar Energy Materials and Solar Cells | 2009 | 6 Pages |
Abstract
The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 1021 cm−3, are measured in the 90–370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of the appearance of an intermediate band (IB) region able to form a blocking junction with the substrate and of the appearance of an IB conduction. Explanations based on ordinary device physics fail to justify all the unconventional behavior of the characteristics observed.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
G. Gonzalez-Díaz, J. Olea, I. Mártil, D. Pastor, A. Martí, E. Antolín, A Luque,