Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8038465 | Ultramicroscopy | 2013 | 9 Pages |
Abstract
The dislocations created by mechanical polishing of SrTiO3 (100) single crystals were investigated by means of transmission electron microscopy (TEM) techniques combined with scanning TEM (STEM) techniques. A high density of dislocations was observed in the surface layer with a thickness of about 5 μm. These dislocations were found to be straight and highly aligned along the ã111ã directions. In most cases they appear in pairs or as a bundle. The nature of the dislocations was determined as mixed ã110ã-type with the line vector t=ã111ã. They are ã110ã-type 35.26° dislocations. The isolated ã110ã-type 35.26° dislocations possess a compact core structure with a core spreading of ~0.5 nm. Dissociation of the dislocation occurs on the {1â10} glide plane, leading to the formation of two b=a/2ã110ã partials separated by a stacking fault. The separation of the two partials was estimated to be 2.53±0.32 nm based on a cross-correlation analysis of atomic-resolution images. Our results provide a solid experimental evidence for this special type of dislocation in SrTiO3. The high density of straight and highly ã111ã-orientated dislocations is expected to have an important influence on the anisotropy in electrical and mass transport properties.
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Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
L. Jin, X. Guo, C.L. Jia,