| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8038521 | Ultramicroscopy | 2012 | 4 Pages |
Abstract
⺠We obtained experimental quantitative annular dark field image of silicon crystal. ⺠The image contrast in the experiment was decreased as the probe current increases. ⺠We simulated the annular dark field image using multi-slice calculation. ⺠The experimental images were compared with the simulation, quantitatively. ⺠The decrease in the contrast was primarily determined by the size of the cold field emission source.
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Authors
Suhyun Kim, Yoshifumi Oshima, Yasumasa Tanishiro, Kunio Takayanagi,