| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8038573 | Ultramicroscopy | 2011 | 5 Pages |
Abstract
⺠STEM defect analysis has been extended to include dislocations. ⺠Systematic row, zone axis & 3g diffraction conditions are all found to be useful for general defect observations in STEM mode. ⺠Conventional contrast visibility rules for diffraction contrast are found to remain valid for STEM observations. ⺠Multi-beam dynamical scattering matrix simulations provide excellent agreement with experimental images.
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Authors
P.J. Phillips, M.C. Brandes, M.J. Mills, M. De Graef,