Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8038808 | CIRP Annals - Manufacturing Technology | 2018 | 4 Pages |
Abstract
Single-crystal diamond (SCD) is considered to be an ideal material for next-generation power devices. Plasma-assisted polishing (PAP) without using an abrasive was applied to polish SCD fabricated by chemical vapor deposition. Argon-based plasma containing water vapour was used in the PAP to modify the surface of polishing plate and SCD (100), and SCD was polished under a polishing pressure ranging from 10 to 52.6 kPa. Raman spectroscopy measurement showed that there was no residual stress on the polished SCD surface, and a polishing rate of 2.1 μm/h and a surface roughness of 0.13 nm Sq were obtained.
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Authors
K. Yamamura, K. Emori, R. Sun, Y. Ohkubo, K. Endo, H. Yamada, A. Chayahara, Y. Mokuno,