Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8039047 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2018 | 5 Pages |
Abstract
Low energy protons damage GaInP/GaAs/Ge solar cells seriously. Traditional degradation researches require many supplementary tests, such as quantum efficiency (QE) or photoluminescence (PL). In this paper, we would establish a method that could analysis degradation of solar cells without any other equipment except a solar simulator. A voltage-current analysis technique under various intensities (X) of light was developed to study the degradation mechanisms of proton-irradiated GaInP/GaAs/Ge solar cells. Sum of ideality factor of every sub-cell Σni could be calculated from the change of open circuit voltage (Voc) with light intensities in multi-junction solar cells. The change of ideality factor shows significant increase of Shockley-Read-Hall (SRH) recombination after 70â¯keV and 150â¯keV protons irradiation. Shunt resistance Rsh increases with intensities, which is different from silicon solar cells. The change of Rsh with light intensities was used to describe the current mismatch among the sub-cells in the multijunction solar cell. After irradiation, the current mismatch becomes larger. The relative degradation rate is different under different intensities of light. The max-power degradation tends to be smaller at high intensities.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Guo Hongliang, Shi Linfeng, Wu Yiyong, Sun Qiang, Yu Hui, Xiao Jingdong, Guo Bin,