| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8039080 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2018 | 5 Pages |
Abstract
AlGaN/GaN high electron mobility transistor (HEMT) devices were irradiated with swift heavy ions at different fluences. From structural and electrical studies, it was found that SHI irradiation leads to a significant deterioration of structural and electrical properties of the devices. Positive threshold voltage Vth was found to increase by about 85% as a result of irradiation with 1540-MeV 209Bi ions at fluence of 1.7â¯Ãâ¯1011â¯ions/cm2, while this threshold voltage value was increased by 55% after irradiation with 2300-MeV 129Xe at a fluence of 4â¯Ãâ¯1011â¯ions/cm2. The maximum saturation drain current Ids was decreased by about two orders of magnitude in the device after irradiation with 209Bi ions. Quasi-continuous tracks were observed visually in the devices after irradiation with 209Bi ions. The observed defects and disorders induced in the devices by SHI irradiation were found responsible for the decrease in carrier mobility and sheet carrier density, and finally, these defects resulted in the degradation of electrical characteristics of HEMTs.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
P.P. Hu, J. Liu, S.X. Zhang, K. Maaz, J. Zeng, P.F. Zhai, L.J. Xu, Y.R. Cao, J.L. Duan, Z.Z. Li, Y.M. Sun, X.H. Ma,