Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8039207 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2018 | 10 Pages |
Abstract
The line for the pulsed beam of the 3â¯MeV Tandetron accelerator at LABEC (Florence) has been upgraded for ion implantation experiments aiming at the fabrication of single-photon emitters in a solid-state matrix. A system based on Al attenuators has been calibrated in order to extend the energy range of the implanted ions from MeV down to the tens of keV. A new motorized XY stage has been installed in the implantation chamber for achieving ultra-fine control on the position of each implanted ion, allowing to reach the scale imposed by lateral straggling. A set-up for the activation of the implanted ions has been developed, based on an annealing furnace operating under controlled high-vacuum conditions. The first experiments have been performed with silicon ions implanted in diamond and the luminescent signal of the silicon-vacancy (SiV) center, peaked at 738â¯nm, has been observed for a wide range of implantation fluences (108â¯Ã·â¯1015â¯cmâ2) and implantation depths (from a few nm to 2.4â¯Âµm). Studies on the efficiency of the annealing process have been performed and the activation yield has been measured to range from 1% to 3%. The implantation and annealing facility has thus been tuned for the production of SiV centers in diamond, but is in principle suitable for other ion species and solid-state matrices.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Stefano Lagomarsino, Silvio Sciortino, Nicla Gelli, Assegid M. Flatae, Federico Gorelli, Mario Santoro, Massimo Chiari, Caroline Czelusniac, Mirko Massi, Francesco Taccetti, Mario Agio, Lorenzo Giuntini,