| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8039232 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2018 | 6 Pages |
Abstract
Due to the induced extremely fast thermal and dynamic process, Intense Pulsed Ion Beam (IPIB) is widely applied in material processing, which can bring enhanced material performance and surface craters as well. To investigate the craters' formation mechanism, a specific model was built with Finite Element Methods (FEM) to simulate the thermal field on irradiated single crystal silicon. The direct evidence for the existence of the simulated 6-fold rotational symmetric thermal distribution was provided by electron microscope images obtained on single crystal silicon. The correlation of the experiment and simulation is of great importance to understand the interaction between IPIB and materials.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Jie Shen, Xiao Yu, Jie Zhang, Haowen Zhong, Xiaojun Cui, Guoying Liang, Xiang Yu, Wanying Huang, Ijaz Shahid, Xiaofu Zhang, Sha Yan, Xiaoyun Le,