Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8039239 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2018 | 5 Pages |
Abstract
The gas cluster ion beam technique was used for the silicon carbide crystal surface smoothing. The effect of processing by two inert cluster ions, argon and xenon, was quantitatively compared. While argon is a standard element for GCIB, results for xenon clusters were not reported yet. Scanning probe microscopy and high resolution transmission electron microscopy techniques were used for the analysis of the surface roughness and surface crystal layer quality. The gas cluster ion beam processing results in surface relief smoothing down to average roughness about 1â¯nm for both elements. It was shown that xenon as the working gas is more effective: sputtering rate for xenon clusters is 2.5 times higher than for argon at the same beam energy. High resolution transmission electron microscopy analysis of the surface defect layer gives values of 7â¯Â±â¯2â¯nm and 8â¯Â±â¯2â¯nm for treatment with argon and xenon clusters.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
A.E. Ieshkin, D.S. Kireev, Yu.A. Ermakov, A.S. Trifonov, D.E. Presnov, A.V. Garshev, Yu.V. Anufriev, I.G. Prokhorova, V.A. Krupenin, V.S. Chernysh,