| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8039520 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2018 | 6 Pages |
Abstract
X-ray photoelectron spectroscopy (XPS) and Ultraviolet Photoelectron Spectroscopy (UPS) were used to evaluate and determine the effects of 1Â KeV Ar+ irradiation (sputtering) on the surface chemical composition and work function of Indium Thin Oxide (ITO). While Ar+ sputtering removes carbon-based surface contaminants, it also modifies the Sn-rich surface of ITO and leads to a reduction of the oxidation state of Sn from Sn4+ to Sn2+. The decrease in the work function of ITO is directly correlated to the decrease of Sn atomic concentration in the Sn-rich top surface layer and the reduction of the oxidation state of surface Sn.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Hui Che, M. El Bouanani,