Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8039617 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2016 | 5 Pages |
Abstract
We report on ion implantation into GaN QDs and investigate their radiation hardness. The experimental study is carried out by photoluminescence (PL) measurements on molecular beam epitaxy-grown GaN quantum dots after ion implantation. Both quantum dots grown in the hexagonal (H) and the cubic (C) crystal structure were subjected to gallium ions with an energy of 400Â kV (H) and 75Â kV (C) with fluences ranging from 5Ã1010Â cmâ2 to 1Ã1014Â cmâ2 (H) and to 1Ã1015Â cmâ2 (C), respectively. Low-temperature PL measurements reveal a PL quenching for which a quantitative model as a function of the ion fluence is developed. A high degradation resistance is concluded. A non-radiative trap with one main activation energy is found for all QD structures by temperature-dependent PL measurements. Further analysis of fluence-dependent PL energy shifts shows ion-induced intermixing and strain effects. Particular for the hexagonal quantum dots, a strong influence of the quantum confined Stark effect is present.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Charlotte Rothfuchs, Nadezhda Kukharchyk, Tristan Koppe, Fabrice Semond, Sarah Blumenthal, Hans-Werner Becker, Donat J. As, Hans C. Hofsäss, Andreas D. Wieck, Arne Ludwig,