Defect creation via dissociative recombination of ionic centers in solid Ne matrices

Recombination of the intrinsic ionic centers Ne2+ (self-trapped holes) with the detrapped electrons in solid Ne matrices and relaxation channels have been studied. The experiments were performed employing combination of the cathodoluminescence (CL) with current and optical activation spectroscopy techniques. CL spectra were recorded simultaneously in the VUV and visible range. Yields of spectrally resolved thermally and photon-stimulated luminescence (TSL, PSL) and thermally and photon-stimulated exoelectron emission (TSEE, PSEE) were measured in the time-correlated manner. It was found that the recombination reaction proceeds with irreversible dissociation of the transient Ne2∗∗ centers and the dissociative recombination (DR) products exit the matrix cage. Products of the DR reaction are found to be in 3s and 3p states. The detection of “defect” components in the TSL and PSL points to the defect formation via DR in Ne matrices. The temperature range of the electron traps stability is elucidated. A long-lasting “afteremission” of electrons and afterglow of VUV photons observed on switching off the irradiation suggest the accumulation of the uncompensated negative charge.