Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8039914 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2016 | 5 Pages |
Abstract
Single crystals of SiC were implanted with heavy inert gases (Xe, Ar) at elevated temperatures (300-800 °C) and for a large range of fluence (1 Ã 1012-1 Ã 1015 ions cmâ2). Thermodesorption measurements suggest that gas is trapped by implantation-induced vacancy-type defects impeding any gas diffusion. The damage accumulation versus dose was studied through the tensile elastic strain determined by using X-ray diffraction. Results show that at low dose the strain is predictable via a thermally activated direct impact model. The low thermal activation energy at saturation suggests a dynamic recovery process dominated by the migration of interstitial-type defects as its relaxation during post thermal annealing. As compared with light-gas implantation the heavy-gas to defect ratio is low enhancing the formation of strongly perturbed zones rather than the formation of bubble precursors.
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Surfaces, Coatings and Films
Authors
C. Jiang, J. Nicolaï, A. Declémy, E. Gilabert, M.-F. Beaufort, J.-F. Barbot,