Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8039926 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2016 | 4 Pages |
Abstract
The process of latent track etching in SiO2/Si structures irradiated with 40Ar (38Â MeV), 84Kr (59Â MeV) and 132Xe (133 and 200Â MeV) ions has been investigated. The experimental results of SiO2 etching in a hydrofluoric acid solution have been compared with the results of computer simulation based on the thermal spike model. It has been confirmed that the formation of a molten region along the swift ion trajectory with minimum radius of 3Â nm can serve as a theoretical criterion for the reproducible latent track etching tracks in SiO2.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
A. Al'zhanova, A. Dauletbekova, F. Komarov, L. Vlasukova, V. Yuvchenko, A. Akilbekov, M. Zdorovets,