Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8039953 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2016 | 5 Pages |
Abstract
To investigate electrically-active deep levels in high-resistivity single-crystalline diamond, particle-induced charge transient spectroscopy (QTS) techniques were performed using 5.5Â MeV alpha particles and 9Â MeV carbon focused microprobes. For unintentionally-doped (UID) chemical vapor deposition (CVD) diamond, deep levels with activation energies of 0.35Â eV and 0.43Â eV were detected which correspond to the activation energy of boron acceptors in diamond. The results suggested that alpha particle and heavy ion induced QTS techniques are the promising candidate for in-situ investigation of deep levels in high-resistivity semiconductors.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
W. Kada, Y. Kambayashi, Y. Ando, S. Onoda, H. Umezawa, Y. Mokuno, S. Shikata, T. Makino, M. Koka, O. Hanaizumi, T. Kamiya, T. Ohshima,