Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8040405 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2015 | 8 Pages |
Abstract
The effect of temperature on the output performance of four different types of betavoltaic microbatteries was investigated experimental and theoretical. Si and GaAs were selected as the energy conversion devices in four types of betavoltaic microbatteries, and 63Ni and 147Pm were used as beta sources. Current density-voltage curves were determined at a temperature range of 213.15-333.15Â K. A simplified method was used to calculate the theoretical parameters of the betavoltaic microbatteries considering the energy loss of beta particles for self-absorption of radioactive source, the electron backscatter effect of different types of semiconductor materials, and the absorption of dead layer. Both the experimental and theoretical results show that the short-circuit current density increases slightly and the open-circuit voltage (VOC) decreases evidently with the increase in temperature. Different combinations of energy conversion devices and beta sources cause different effects of temperature on the microbatteries. In the approximately linear range, the VOC sensitivities caused by temperature for 63Ni-Si, 63Ni-GaAs, 147Pm-Si, and 147Pm-GaAs betavoltaic microbatteries were â2.57, â5.30, â2.53, and â4.90Â mV/K respectively. Both theoretical and experimental energy conversion efficiency decreased evidently with the increase in temperature.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Hao Wang, Xiao-bin Tang, Yun-Peng Liu, Zhi-Heng Xu, Min Liu, Da Chen,