Article ID Journal Published Year Pages File Type
8040468 Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2015 4 Pages PDF
Abstract
The reaction between a thin film (126 nm) of Co and Si has been studied at 450 °C for 24 h under high vacuum conditions, in the presence of a FeZr barrier layer. Without a diffusion barrier layer between Co and Si, Co2Si forms at 350 °C as the initial phase while CoSi2 forms at 550 °C. The FeZr barrier layer changed the flux of atoms arriving at the reaction interface. Co reacted with the Si from the substrate and formed a mixed layer of CoSi and CoSi2 in the interlayer region. The use of the FeZr diffusion barrier has been demonstrated to lower the temperature formation of CoSi2 to 450 °C. The reactions were characterised by Rutherford backscattering spectrometry, Auger electron spectroscopy depth profiling, X-ray diffraction using CoKα radiation and scanning electron microscopy.
Related Topics
Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
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