| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8040552 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2015 | 5 Pages |
Abstract
The planar channeling of 3â¦20 GeV electrons and positrons in bent Si(1 1 1) crystal was simulated by means of the MBN Explorer software package. The results of the simulations are analyzed in terms of dechanneling length characterization, angular distribution of outgoing projectiles and radiation spectrum. The results of calculations are compared with the recent experimental data.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Gennady B. Sushko, Andrei V. Korol, Andrey V. Solov'yov,