Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8040937 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2015 | 5 Pages |
Abstract
A series of 60Â keV He+ implantations was conducted on Cu/W(Re, 5.9Â at.%) multilayered structures with ion doses from 5Â ÃÂ 1019 to 5Â ÃÂ 1021Â m2 under different temperature. Three distinct, temperature-dependent He release mechanisms were found by subsequent X-ray diffraction (XRD) and scanning electron microscope (SEM) investigations. Firstly, with implantation at 300Â K (about T/Tm (Cu)Â =Â 0.22), a certain degree of blistering was observed with a critical dose higher than 5Â ÃÂ 1021Â mâ2. But, at higher temperature irradiation (about T/Tm (Cu)Â =Â 0.35), samples implanted were characterized by extensive blisters at the dose of 2Â ÃÂ 1021Â mâ2. Finally, at 673Â K (about T/Tm (Cu)Â =Â 0.5), the specimen flaked and a rough, porous surface formed when the dose was higher than 1Â ÃÂ 1021Â mâ2. The mechanisms involved have been analyzed based on the detailed characterization studies.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Shunli Chen, Bo Liu, Liwei Lin, Guohua Jiao,