| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8041131 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2014 | 6 Pages |
Abstract
Two sets of p- and n-conductivity type silicon samples have been irradiated by 6.6Â MeV electrons with fluence from 1 to 5 (Ã1016)Â e/cm2. Hall and magnetoresistivity measurement techniques were used to determine irradiation induced changes. The point defect coalescence was assumed to describe the behavior of the electrical parameters.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Algirdas Mekys, Vytautas Rumbauskas, Jurgis Storasta, Leonid Makarenko, Juozas Vidmantis Vaitkus,