Characterization of defects in n-type 4H-SiC after high-energy N ion implantation by RBS-channeling and Raman spectroscopy

Implantation with 1 MeV N ions was performed at room temperature in n-type 4H-SiC (0 0 0 1) at four implantation fluences (or doses in dpa (displacements per atom) at the damage peak) of 1.5 × 1013 (0.0034), 7.8 × 1013 (0.018), 1.5 × 1014 (0.034), and 7.8 × 1014 (0.178) ions/cm2, respectively. The evolution of disorder was studied using Rutherford backscattering spectrometry in channeling mode (RBS-C), Raman spectroscopy, and optical transmission. The disorder in the Si sub-lattice was found to be less than 10% for the dpa of 0.0034 and 0.0178 and increased to 40% and 60% for the dpa of 0.034 and 0.178 respectively. The normalized Raman intensity In, shows disorder of 41%, 69%, 77% and 100% for the dpa of 0.0034, 0.0178, 0.034 and 0.178, respectively. In this paper, the characterization of the defects produced due to the nitrogen implantation in 4H-SiC are presented and the results are discussed.