Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8041658 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2014 | 5 Pages |
Abstract
ZnO and Zn2SiO4 nanoparticles have been synthesized by dual beam implantation of 45 keV ZnOâ molecular ions and 15 keV Oâ ions into Si (100) substrates at room temperature to fluences of 1 Ã 1017 and 2 Ã 1017 ions/cm2, respectively. Implanted samples were annealed at different temperatures in a mixture of Ar and H2 for 1 h. Rutherford backscattering spectrometry (RBS) was used to confirm the implanted ion fluences. The diffusion of Zn and O ions due to annealing was studied by using X-ray photoelectron spectroscopy (XPS). It was observed that at 700 °C annealing temperature, oxygen diffused into the substrate whereas Zn diffused in both directions; at 900 °C, oxygen diffused more into the substrate but the Zn diffused outward toward the surface. X-ray diffraction (XRD) was used to investigate the phase formation and particle sizes. At 700 °C annealing temperature, ZnO phase with an average nanoparticle size of â¼17.5 nm was observed whereas at 900 °C annealing temperature, Zn2SiO4 phase with an average nanoparticle size of â¼19 nm was observed.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
B. Pandey, D.L. Weathers,