Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8041844 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2014 | 7 Pages |
Abstract
In this work the differential cross sections for gamma-ray emission from the 14N(d,pγ)15N (Eγ = 1885, 2297, 7299 and 8310 keV) and from the 28Si(d,pγ)29Si (Eγ = 1273, 2028, 2426 and 4934 keV) were measured simultaneously with the 14N(d,p4,5,6,7)15N differential cross sections and 14N(d,d)14N elastic scattering cross section using a HPGe detector at 55° and an ion implanted Si detector at 135° with respect to the beam direction in the deuteron energy range 0.65-2.0 MeV. The target was a thin silicon-nitride film. Gamma-ray angular distribution measurements were performed to determine the possible anisotropy of the gamma-ray emission, and the measured cross section values were converted into total gamma-ray producing cross sections for most of the gamma-ray emissions. The average uncertainties of nitrogen and silicon gamma-ray production cross sections are 5% and 12%, respectively and 8% concerning the particle production cross section of natN(d,d0)natN and 14N(d,p4,5,6,7)15N reactions.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
L. Csedreki, I. Uzonyi, Z. Szikszai, Gy. Gyürky, G.Á. SzÃki, Á.Z. Kiss,