| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8041997 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2014 | 4 Pages |
Abstract
We construct a model to obtain the density of point defects in N-layer graphene by combining Raman spectroscopy and the TRIM (Transport Range of Ions in Matter) simulation package. The model relates the intensity (or area) ratio of graphene's D and G bands to the defect density on each layer due to Ar+ bombardment. Our method is effective for ion fluences ranging from 1011 to â¼1014Â Ar+/cmâ2 and it should be in principle extendable to any kind of ion and energy.
Related Topics
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Materials Science
Surfaces, Coatings and Films
Authors
Ronaldo Giro, Braulio S. Archanjo, Erlon H. Martins Ferreira, Rodrigo B. Capaz, Ado Jorio, Carlos A. Achete,