Anomalous deep ion-induced modification of HOPG

The temperature dependences ion-induced processes of HOPG (UPV-1T) basal plane modification under high-fluence (1018 ion/cm2) 10-30 keV Ar+ ion irradiation have been studied in temperature range from room temperature to 400 °C. The RBS has been applied to estimate the modified layer depth. The morphology changes have been studied by SEM. It has been found that at sufficiently high ion energy the modified layer depth can be ten times more then the ion projected range Rp. The two different effects of deep modification with depth >1000 nm are observed. Firstly, at the temperatures smaller then the temperature of ion-induced texture transition T