| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8042271 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2013 | 4 Pages |
Abstract
Thin films of amorphous Si3N4 (thickness 5-30Â nm) were irradiated with 360-720Â keV C602+ ions. Ion tracks were observed using transmission electron microscopy (TEM) and high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). The track length and the radial density profile of the track were measured for various combinations of the film thickness and the energy of C602+. The length of the ion track produced in a 30-nm film was found shorter than that in a 20-nm film indicating that there is surface effect on track formation. This can be qualitatively understood in terms of the energy dissipation process. The observed radial density profile also depends on the film thickness. The result can be explained by surface cratering.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Y. Morita, K. Nakajima, M. Suzuki, K. Narumi, Y. Saitoh, N. Ishikawa, K. Hojou, M. Tsujimoto, S. Isoda, K. Kimura,