CVD diamond as a position sensitive detector using charge carrier transition time

A concept of position sensitive single crystal chemical vapour deposition (scCVD) diamond detector is proposed and tested using the lateral time resolved ion beam induced current (TRIBIC) using 4.5 MeV proton microbeam. Simulation of charge transients confirmed that it is possible to correlate the length of the signal pulse to the position of the proton impact. The simulation also shows that the position sensitivity of such device is improved when the mobility and the effective lifetime values of the electrons and the holes are significantly different. A proof of concept was confirmed using lateral TRIBIC performed on a 1 × 1 × 0.5 mm scCVD diamond detector.