Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8042964 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2013 | 4 Pages |
Abstract
We present molecular-dynamics simulations of the sputtering of an impurity atom off a Si 2Ã1 (100) surface by 2 keV Ar ions. The impurity is characterized by its mass and its binding energy to the Si substrate. We find that sputtering strongly decreases with the mass and even more strongly with the binding energy of the impurity atom to the matrix. The velocity of the impurity perpendicular to the surface is reduced with increasing impurity mass and binding energy. In terms of available ionization theories we can conclude that heavier impurities will have a smaller ionization probability.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Maureen L. Nietiadi, Yudi Rosandi, Jan LorinÄÃk, Herbert M. Urbassek,