Effects of silicon surface amorphization on single carbon atom deposition/implantation

It is also observed that under-coordinated silicon atoms at the amorphous surface tend to increase the sticking coefficient. This holds particularly true for conditions where a relatively high backscattering yield of the carbon atom on the crystalline surface is observed, as the under-coordinated silicon atoms play the role of traps, catching more carbon atoms at the surface than the silicon surface atoms in the crystalline model.