| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 80430 | Solar Energy Materials and Solar Cells | 2008 | 6 Pages |
In this work, quercetin/p-InP heterojunction solar cell has been fabricated via solution-processing method and characterized by current–voltage and capacitance–voltage measurements at room temperature. A barrier height and an ideality factor value of 0.86 eV and 3.20 for this structure in dark have been obtained from the forward bias current–voltage characteristics. From the capacitance–voltage measurement, the barrier height and free carrier concentration values for the quercetin/p-InP device have been calculated as 1.63 eV and 3.8×1017 cm−3, respectively. Also, series resistance calculation has been performed by using Cheung theory. The device exhibits a strong photovoltaic behavior with a maximum open circuit voltage Voc of 0.36 V and short-circuit current Isc of 35.3 nA under 120 lx light intensity only.
