| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8043893 | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms | 2012 | 4 Pages |
Abstract
We propose a model that explains both saturation and a shift of the maximum of bulk disorder profiles in ion-implanted GaN. Our model is based on two main assumptions that (i) the advancing amorphous/crystalline interface acts as a perfect sink for mobile point defects generated in the crystal bulk and (ii) the diffusion length of mobile defects increases with increasing ion fluence due to saturation of defect sinks in the bulk.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
A.I. Titov, P.A. Karaseov, A.Yu. Kataev, A.Yu. Azarov, S.O. Kucheyev,