Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8043991 | Vacuum | 2018 | 23 Pages |
Abstract
SnS thin films were prepared using a simple two-stage process. The two-stage process involved in sputtering of Sn over glass substrate followed by sulfurization of sputtered Sn at 350â¯Â°C. The sulfurization process was carried out in the ambience of sulfur for different time lengths, 10-120â¯min and its influence on physical properties are reported. XRD study showed that the films sulfurized at 10â¯min were poor in crystallinity with reflections of un-reacted tin and sulfur. As the sulfurization time (St) is increased to 60â¯min, a single phase orthorhombic SnS was observed with (111) preferred plane. Four distinct Raman modes at 95, 163, 190 and 220â¯cmâ1 confirms the formation of SnS for Stâ¯>â¯30â¯min, however, Stâ¯<â¯30â¯min treated Sn films had extra Raman peak at 489â¯cmâ1 related to Sx phase. The ratio of Sn/S was found to be 2.92 for 10 min and reached stoichiometric ratio with densely packed grain morphology for 60 min. The optimized films showed a direct band-gap of 1.35 eV. The XPS oxidation states of Sn and S were found to be (+2) and (â2), indicating the formation of SnS. The St dependent electrical measurements are also reported and discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
M. Gurubhaskar, Narayana Thota, M. Raghavender, G. Hema Chandra, P. Prathap, Y.P. Venkata Subbaiah,