| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8044147 | Vacuum | 2018 | 13 Pages |
Abstract
High resistance Zinc oxide (ZnO) films have been prepared on Si (100) substrates using magnetron sputtering method. Structure analysis revealed a clear out-of-plane orientation of ZnO (001) || Si (100). The metallic composition of the contact is a critically important parameter for making ohmic contacts to ZnO films. Al/Ti metal contacts show linear I-V characteristics indicative of ohmic behavior, while other metal contacts such as Al and Ti show nonlinear characteristics with rectification, that reveal the presence of schottky barriers.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Yu Yan, Wei Mi, Jinshi Zhao, Zhengchun Yang, Kailiang Zhang, Chongbiao Luan,