High transparent and conductive undoped ZnO thin films deposited by reactive ion-beam sputtering

For the first time, reactive ion-beam sputtering method was successfully used for the deposition of conductive undoped ZnO thin films on glass and Si substrates. The best films quality was observed in the samples deposited at Tsub of 200-250 °C and Va of 6 keV. The ZnO films demonstrated a p-type conductivity, which however was not stable over time, and resistivity ranging from 2.2 × 10−3 to 2 × 10−1 Ohm∙cm, being 86% transmitted for a visible light.269