Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8044346 | Vacuum | 2018 | 18 Pages |
Abstract
Knowing the mechanical properties of single crystal silicon after implantation with hydrogen and annealing are important for “smart cut” process and in improving ultra-precision cutting of silicon. There is limited information on hardness and modulus of such silicon. In this article, the effect of hydrogen implantation dose and post-implantation annealing on silicon hardness and modulus were investigated. Continuous implanted silicon layers, from the surface to the depth of â¼500â¯nm, were produced. Samples with three different implantation doses and with post-implantation annealing at 350â¯Â°C and 400â¯Â°C were prepared. Hardness and modulus were obtained through dynamic nanoindentation, while structural properties were evaluated by Rutherford backscattering spectroscopy and high resolution x-ray diffraction. Hardness and modulus were significantly reduced after annealing for the highest implantation dose. With the annealing, the implantation-induced strain had the least relaxation for the lowest implantation dose. The obtained results could be useful for understanding the role of hydrogen in nano-cutting of hydrogen-implanted silicon.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Suet To, Emil V. JelenkoviÄ, Lyudmila V. Goncharova, Sing Fai Wong,