Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8044398 | Vacuum | 2018 | 8 Pages |
Abstract
The effect of the annealing temperature on the optical and structural properties of the a-SiOx:H thin films prepared by gas-jet electron beam plasma chemical vapor deposition method was studied. Annealing was carried out at 600, 700, 800, 900 and 1000â¯Â°C for 4â¯h in oxidizing atmosphere. According to FTIR spectroscopy measurements, the oxygen and hydrogen concentration in the as-deposited films was 25â¯at.% and 2â¯at.%, respectively. The SEM image showed that the as-deposited material had column structure with a large number of vertical voids. As a result of annealing, the thickness of the films decreased by approximately 1.5 times for all samples. The value of refractive index at 650â¯nm decreased from 2.5 to 2.0 with the increase of the annealing temperature. The E04 optical gap decreased in comparison with the value of the as-deposited thin films for 600â¯Â°C and 700â¯Â°C, and increased for 800-1000â¯Â°C. For annealing at a temperature of 600â¯Â°C, the structure of the material changes insignificantly. A rearrangement in the structure of the matrix with the formation of amorphous silicon nanoclusters occurs at 700â¯Â°C and 800â¯Â°C. Annealing at the higher temperatures leads to transition from a material with amorphous nanoclusters to a material with nanocrystallites.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
A.O. Zamchiy, E.A. Baranov, I.E. Merkulova, V.A. Volodin, M.R. Sharafutdinov, S.Ya. Khmel,