| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 8044463 | Vacuum | 2018 | 12 Pages |
Abstract
Perylene-66 thin films were efficiently prepared at room temperature utilizing thermal evaporation technique (TET). The XRD and FT-IR of the powder and the as-deposited film were examined. A hybrid (organic/inorganic) heterojunction device based on perylene-66 growth onto p-type silicon wafer was characterized by the impedance spectroscopy (IS) method in the frequency range from 100â¯Hz to 2â¯MHz and the temperature range from 303â¯K to 383â¯K in dark. The Cole-Cole plots show 2 relaxation mechanisms for all temperatures. The maximum barrier height WM value is 0.26â¯eV. The AC conductivity is found to comply Jonscher's universal power law, and the correlated barrier hopping was observed to be the predominant conduction mechanism for the charge carrier transport.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
M.M. Shehata, M.O. Abdel-Hamed, K. Abdelhady,