Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8044530 | Vacuum | 2018 | 10 Pages |
Abstract
Crystal structure transformations in V(25â¯nm)/SiO2(001) and V(25â¯nm)/Ag(25â¯nm)/SiO2(001) thin films during annealing in vacuum of 10â3â¯Pa in the temperature range from 400â¯Â°C to 600â¯Â°C have been investigated by synchrotron X-ray powder diffraction. Crystal lattice parameters of VOx phase were evaluated for all transformations stages as well as its tetragonality degree. Additional techniques such as in-situ electron diffraction, secondary ion mass-spectrometry and transmission electron microscopy have been applied as well. Introduction of the Ag layer affects the V film structure and its oxidation property during annealing. The body-centered monoclinic (bcm) lattice forms in V films after annealing. On the other hand, presence of the Ag layer leads to formation of the body-centered tetragonal (bct) structure during annealing at the same temperature. Ag suppresses oxygen incorporation into the film during annealing due to its diffusion into V grain boundaries and following diffusion induced grain boundary migration, leading to decrease of vanadium grains size. Mentioned above structural changes have not been detected for samples annealed in a vacuum of 10â7â¯Pa in the same temperature range.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
A.K. Orlov, I.O. Kruhlov, O.V. Shamis, I.A. Vladymyrskyi, I.E. Kotenko, S.M. Voloshko, S.I. Sidorenko, T. Ebisu, K. Kato, H. Tajiri, O. Sakata, T. Ishikawa,