Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8044610 | Vacuum | 2018 | 57 Pages |
Abstract
In this paper, we study the electronic properties of graphene/phosphorene (G/P) heterostructure under applied electric field. The interlayer distance between graphene and topmost phosphorene is 3.50â¯Ã
and the binding energy per carbon atom is 28.2â¯meV, which is indicated that graphene is bound to phosphorene via vdW interaction. The appearance of an energy gap of 33â¯meV in graphene is due to the dominant influence exerted by the phosphorene on graphene and sublattice symmetry broken between graphene and substrate. The G/P heterostructure forms a p-type Schottky contact with ΦBp â¯=â¯0.34â¯eV. By applying the negative electric field, the G/P heterostructure keeps a p-type Schottky contact. Whereas with the positive electric field of Eâ¥Â +0.25 V/Ã
, ΦBp becomes larger than ΦBn, resulting in a transformation from p-type to n-type Schottky contact. The present results may open up a new avenue for application of the G/P vdW heterostructure in electronic devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Huynh V. Phuc, Victor V. Ilyasov, Nguyen N. Hieu, Chuong V. Nguyen,