Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8044824 | Vacuum | 2017 | 21 Pages |
Abstract
We prepared V-Al-C films on glass and silicon (with native SiO2 layer) substrates using magnetron co-sputtering at 600 °C. The composition and microstructure of these films were characterized by Rutherford backscattering spectrometry, X-ray diffraction, Raman spectroscopy, and transmission electron microscopy. Polycrystalline V2AlC phase was obtained in the films with nearly stoichiometric composition. The microstructural evolution includes random nucleation at the film/substrate interface, competitive growth resulting in a (110) preferred orientation with increasing thickness. The mechanism for crystallization could be understood in terms of polymorphic crystallization. The results show that polycrystalline MAX-phase V2AlC could be directly synthesized on amorphous substrates.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Rui Shu, Fangfang Ge, Fanping Meng, Peng Li, Ji Wang, Qing Huang, Per Eklund, Feng Huang,