Article ID Journal Published Year Pages File Type
8044845 Vacuum 2016 4 Pages PDF
Abstract
In this work, a resistance switching memory based on organic/inorganic hybrid perovskites (OIHPs) was fabricated. The CH3NH3PbI3 perovskite was grown on polymethyl methacrylate (PMMA) as the resistance switching layer by using a two-step spin-coating procedure. The conduction mechanisms of indium-tin-oxide (ITO)/PMMA/CH3NH3PbI3/PMMA/Ag device were investigated in terms of current-voltage characteristics. The memory device is reprogrammable and the ON/OFF ratio reaches as high as 103. Endurance cycle of the as-fabricated memory device was also carried out. The results indicate the promising electronic application of OIHPs in resistance switching memories.
Related Topics
Physical Sciences and Engineering Materials Science Surfaces, Coatings and Films
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