Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8044919 | Vacuum | 2016 | 27 Pages |
Abstract
We investigated the effects of sputtering power on the microstructure of direct-current magnetron sputter-deposited TiVCr films on silicon wafer grown at room temperature. When the sputtering power was 100Â W, composite structure with amorphous and body-centered cubic (BCC) crystal phases can be observed. When sputtering power was increased to 200Â W, the composite structure was almost transformed into crystal columnar structure. Apart from interface region, the amorphous zone was composed of bundles of fine fibrous structure, whereas the BCC crystal zone contained V-shaped columnar structures without significant element segregation. Results indicated that the high sputtering power favored the formation of crystal films and the decrease of intracolumnar voids. However, a significant crack occurred, thereby widening intercolumnar voids. The film deposited at high sputtering power demonstrates slight improvement of mechanical properties.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
Du-Cheng Tsai, Zue-Chin Chang, Bing-Hau Kuo, Yu-Shiuan Deng, Erh-Chiang Chen, Fuh-Sheng Shieu,