Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
8044955 | Vacuum | 2015 | 13 Pages |
Abstract
Structural and optical properties of ZnO1âxSx (0 â¤Â x â¤Â 1.0) thin films grown onto sapphire substrates (â¿-Al2O3) at 300 °C by radio frequency (rf) magnetron sputtering of ZnS ceramic target are studied. A possibility of purposeful controlling sulfur content and, as consequence, ZnO1âxSx band gap energy via changing the ratio of the partial pressures of argon and oxygen are revealed. Linear dependence of ZnO lattice parameter c on S content suggests that structural properties of single-phase ternary alloys in the composition range between ZnO and ZnS obey Vegard's law. The mechanisms of influence of gas mixing ratio on film growth and band gap energy are discussed. Cu(In,Ga)Se2 (CIGS)-based heterojunction solar cells with ZnO1âxSx buffer layers were fabricated by one-cycle magnetron sputtering procedure. Electrical characteristics of Cd-free devices are comparable to those of CdS-containing photovoltaic heterostructures, thereby indicating prospects of using ZnO1âxSx layers for fabrication of CIGS solar cells.
Related Topics
Physical Sciences and Engineering
Materials Science
Surfaces, Coatings and Films
Authors
V. Khomyak, I. Shtepliuk, V. Khranovskyy, R. Yakimova,