Photoluminescence spectra of nitrogen-rich InN thin films grown on Si(110) and photoelectrochemical etched Si(110)

Indium nitride (InN) thin films were deposited on anisotropic silicon [Si(110)] and photoelectrochemical etched silicon [Psi(110)] substrates by reactive radio-frequency sputtering. All deposited films showed wurtzite nanocrystalline InN films with a (101) preferred growth orientation. The optical properties of the nitrogen-rich InN thin films were investigated under various deposition gas concentrations. Strong photoluminescence was observed in the 1.8 eV-1.98 eV energy range for nanocrystalline InN grown on Si(110) at room temperature. The lower energy emission peak was achieved for InN grown on PSi(110) samples.